Discussion of Article 2 in Volume 4

This is a discussion of the MIJ-NSR article entitled Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer by H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra

Description of the paper by the reviewer(s):

Reviewer 1: This paper is well organized and very interesting in nitride semiconductor research field to be published to MRS Internet Journal of Nitride Semiconductor Research. I have a few comments as below. Could you submit the paper after a further investigation? 1. You mentioned about pure screw and mixed dislocations in Fig. 2 and 3. But it is hard to understand which one is a pure screw dislocation or a mixed dislocation in the figures. It is better to draw arrows in the figures for convenience. 2. You showed that the tilt in the LEO region is different depending on the sample A and B. Could you comment why the difference occurs, if you have discussion about that?

This discussion is moderated by H. Marchand.

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