Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer


H. Marchand, N. Zhang, L. Zhao, Y. Golan
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara

S. J. Rosner, G. Girolami
Hewlett-Packard Laboratories, Palo Alto

Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra
Electrical and Computer Engineering and Materials Departments, University of California, Santa Barbara

This article was received on Thursday, February 11, 1999 and accepted on Wednesday, March 10, 1999.

Abstract

Lateral epitaxial overgrowth (LEO) on Si(111) substrates using an AlN buffer layer is demonstrated and characterized using scanning electron microscopy, atomic force microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence spectroscopy, and cathodoluminescence imaging. The <1(-1)00>-oriented LEO GaN stripes grown on silicon substrates are shown to have similar structural properties as LEO GaN grown on GaN/Al2O3 substrates: the surface topography is characterized by continuous crystallographic steps rather than by steps terminated by screw-component threading dislocations; the density of threading dislocations is <106 cm-2; the LEO regions exhibit crystallographic tilt (0.7-4.7°) relative to the seed region. The AlN buffer thickness affects the stripe morphology and, in turn, the microstructure of the LEO GaN. The issues of chemical compability and thermal expansion mismatch are discussed.

Outline

  • Introduction
  • Experimental
  • Results
  • Discussion
  • Stripe morphology and microstructure
  • Thermal mismatch
  • Conclusions
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 2(1999).

    last updated Saturday, April 3, 1999 12:28:19 AM.

    © 1999 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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