Stationary PL spectra at 2 K of three coherently strained In0.15Ga0.85N/GaN MQWs grown on sapphire at 700 °C. Sample 1 is nominally undoped, but has a background Si donor doping of about 1 x 1017 cm-3 in the well. The other two samples are Si-doped in the wells, to a density of about 4 x 1017 cm-3for sample 2 and about 2 x 1018 cm-3 for sample 3. The GaN barriers are not Si-doped.
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