Stationary PL spectra as well as PLE spectra at 2 K of two coherently strained and nominally undoped In0.15Ga0.85N/GaN MQWs grown on sapphire with the InGaN layer growth temperatures indicated: (a) left panel, 700 °C, (b) right panel, 780 °C. The spectra are obtained with low intensity excitation employing a Xe lamp. The PL signal at lower photon energies is very weak in both cases. The PLE spectra are obtained with detection at the peak of the PL signal.
In Fig 5 (c) is shown the dependence of the peak position on the excitation intensity for the same sample as in 5 (b).
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