Stationary PL spectra at 2 K of two coherently strained thick In0.15Ga0.85N epilayers grown on sapphire at the temperatures indicated: (a) left panel, 700 °C, (0.06 µm thick layer) (b) right panel, 780 °C (0.10 µm thick layer). Note that the presence of a spectral contribution at lower photon energies in (b) indicates some segregation.
In (c) are shown two PLE spectra for the same sample as in (b), detected at two different photon energies. The PL spectrum obtained with low intensity lamp excitation is also shown.
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