Figure 2a

Photoluminescence topograph at 300 K of the total emission from an InGaN/GaN MQW sample with the InGaN growth temperature 700 °C. Note that the laser spot has a Gaussian intensity profil. Intensity fluctuations on a length scale of a few µm are observed.

Figure 2b

The same type of data at 300 K for an InGaN/GaN MQW sample with the InGaN growth temperature at 780 °C. The length scale of intensity fluctuations is now smaller, but still resolved

Figure 2c

Monochromatic cathodoluminescence topograph at 6 K from an InGaN/GaN MQW sample with the InGaN growth temperature at 700 °C. Again intensity fluctuations over a length scale of about 1 µm are observed.

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