Figures

Figure 1

SEM image of a cleaved edge of GaN/porous GaN/SiC structure (SiC is not shown).

Figure 2

AFM image of a surface of a GaN layer grown on porous GaN (top) and an AFM profile of the surface (bottom) corresponding to a line as indicated by arrow on top AFM picture. As seen from the profile, the growth steps do not exceed 5 nm.

Figure 3

RHEED pattern obtained from as-grown GaN layer grown on porous GaN.

Figure 4

Raman spectra near E2 mode for a GaN layer grown directly on 6H-SiC substrate (a) and for a GaN layer (b) grown on porous GaN.

© 1999 The Materials Research Society