Strain relaxation in GaN layers grown on porous GaN sublayers
M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev
Ioffe Physical-Technical Institute
D.V. Tsvetkov, S. Stepanov, A.Cherenkov
Crystal Growth Research Center
V.A. Dmitriev
Technologies and Devices International, Inc.
This article was received on Saturday, August 28, 1999 and
accepted on Wednesday, November 10, 1999. Abstract
We
have studied epitaxial GaN layers grown by hydride vapour phase epitaxy (HVPE)
on porous GaN sublayers formed on SiC substrates. It was shown that these
layers can be grown with good surface morphology and high crystalline quality.
X-ray, Raman and photoluminescent (PL) measurements showed that the stress in
the layers grown on porous GaN was reduced to 0.1-0.2 GPa, while the stress in
the layers grown directly on 6H-SiC substrates remains at its usual level of
about 1 GPa. Thus, we have shown that growth on porous GaN sublayer is a
promising method for fabrication of high quality epitaxial layers of GaN with
low strain values.
