New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type AIIIBV on sapphire substrates


M.J. Kotelyanskii
312 Quaker Church Road, Apt. D4, Flanders, NJ, 07869

I.M. Kotelyanskii, V.B. Kravchenko
Institute of Radioengineering and Electronics

This article was received on Thursday, May 6, 1999 and accepted on Thursday, October 28, 1999.

Abstract

We propose the use of a buffer sublayer made of materials with crystal structure of cubic syngony to eliminate 30° in-plane rotation of (0001) heteroepitaxial wurtzite type AIIIBV nitride films with respect to the (0001) or (11(-2)0) working surface of the sapphire substrate. In these cases, the lattice parameter mismatch between the sapphire substrate surface and the semiconductor film is much smaller, and the cleavage planes of the sapphire and the semiconductor films with wurtzite structure forming the active region of a heterolaser are parallel. It is shown experimentally that using, for instance, Nb on (0001) Al2O3 or NbN on (11(-2)0) Al2O3 , allows the elimination of the 30° in-plane rotation of the (0001)AlN film with respect to the (0001) or (11(-2)0) working surface of the sapphire substrate .

Outline

  • Introduction
  • Results and Discussion
  • Summary

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 13(1999).

    last updated Thursday, November 18, 1999 2:39:33 AM.

    © 1999 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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