Tables
Table 1
Specific structure values for the p-i(MQW)-n structures. In this table LB is the thickness of the barrier region, Lw is the thickness on the well region, x is the Indium concentration, and Nw is the number of quantum wells in the intrinsic region.
Sample
|
Nw
|
x(%)
|
Lw(Å)
|
LB(Å)
|
B2
|
2
|
30
|
20
|
90
|
B10
|
10
|
20
|
25
|
70
|
B20
|
20
|
30
|
20
|
70
|
Table 2
Calculated built-in electric field, barrier field and quantum well field under dark conditions and high excitation conditions using a simple model that includes the effect of the piezoelectric field within the quantum well (units are kV/cm). The in-well electric field is always sufficiently large to decrease the oscillator strength for the excitonic transition.
Sample
|
Dark
Condition
|
High
Excitation
|
Fields
in kV/cm
|
Ebi
|
Eb
|
Ew
|
Eb
|
Ew
|
B2
|
1100
|
-1200
|
-400
|
-100
|
700
|
B10
|
380
|
-470
|
90
|
-140
|
420
|
B20
|
180
|
-350
|
450
|
-170
|
630
|
last updated Thursday, October 21, 1999 12:07:46 AM.© 1999 The Materials Research Society
