This article was received on Thursday, August 26, 1999 and
accepted on Wednesday, October 20, 1999.
Abstract
The
presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum
well structures is discussed. Time integrated and time-resolved
photoluminescence measurements and theoretical calculations of the effect of
these fields is presented. Furthermore, a description of how these fields
influence the carrier dynamics and a discussion of how the piezoelectric field
effects the design of GaN/InGaN devices is presented.
