Tables for MIJ-NSR Volume 4, Article 11

Tables

Table 1

Room temperature transverse and longitudinal optical phonon frequencies and broadening parameters for -Al₂O₃ in units of cm^-3 (

= 3.077,

_||= 3.070) [23].

	_TO	_LO	_TO	_LO
E_u	384.99±0.09	387.60±0.08	3.3±0.1	3.1±0.2
	439.10±0.06	481.68±0.05	3.1±0.1	1.9±0.1
	569.00±0.04	629.50±0.05	4.7±0.1	5.9±0.1
	633.63±0.04	906.6±0.1	5.0±0.1	14.7±0.1
A_2u	397.52±0.16	510.87±0.02	5.3±0.2	1.1±0.1
	582.41±0.06	881.1±0.1	3.0±0.1	15.4±0.1

Table 2

IR (A₁) lattice-mode best-fit parameters for

_|| of the Al_xGa_1-xN samples investigated here. The (A₁) _TO (_LO) frequencies have large,

±25% {small,

±1%} uncertainty due to the c-plane orientation of the III-N films (^a) Isotropically averaged between "||" and "

"). See also Table 3.

		_TO [cm^-1]	_LO [cm^-1]	_TO [cm^-1]	_LO [cm^-1]
AlN	4±1	660±71	890±5	15±3^a)	23±4^a)
GaN	4.5±0.4	534±18	735.8±0.2	4±1^a)	8±2^a)
Al_0.17Ga_0.83N	4.4±0.5	555±25	762±3	20±12	60±12
Al_0.28Ga_0.72N	4.4±0.5	569±35	779±4	100±10	163±22
Al_0.50Ga_0.50N	4.2±0.5	597±28	813±6	50±10	50±10

Table 3

IR (E₁) lattice-mode best-fit parameters for

of the Al_xGa_1-xN samples investigated here. The (E₁) _TO (_LO) frequencies have small,

±1% {large,

±25%} uncertainty due to the c-plane orientation of the III-N films (^a) Isotropically averaged between "||" and "

"). See also Table 2.

			_TO [cm^-1]	_LO [cm^-1]	_TO [cm^-1]	_LO [cm^-1]
AlN		4.3±.3	665±0.2	900±3	15±3^a)	23±4^a)
GaN		4.6±.1	562.0±0.3	742.0±0.6	4±1^a)	8±2^a)
Al_0.17Ga_0.83N	E₁^AlN	4.5±0.3	640±2	770±5	60±13	15±2
	E₁^GaN		569±2	630±5	15±2	60±13
Al_0.28Ga_0.72N	E₁^AlN	4.5±0.3	641±2	786±5	15±2	65±3
	E₁^GaN		573±2	624±5	60±3	13±2
Al_0.50Ga_0.50N	E₁^AlN	4.4±0.3	648±2	821±5	23±3	55±3
	E₁^GaN		583±2	618±5	62±3	28±3

Table 4

Free-carrier parameters obtained from the IRSE data analysis and Hall measurements of the Al_xGa_1-xN films investigated here. (^a) assumed values from Hall measurements; ^b) isotropically averaged between "

", and "||", but varied during IRSE best-fit analysis; ^c) assumed values, fixed during best-fit analysis; ^d) sample not measured)

	N [cm^-3]		µ [cm²/Vs]		µ_\|\| [cm²/Vs]	m^* [m₀]	m^*_\|\| [m₀]
	IRSE	Hall	IRSE	Hall	IRSE	IRSE	IRSE
GaN:Si	(7 10¹⁸) ^a)	7 10¹⁸	100±10	170	250±10	0.22±0.01	0.20±0.01
GaN:Si	(1 10¹⁹) ^a)	1 10¹⁹	100±10	260	160±10	0.22±0.03	0.20±0.01
Al_0.17Ga_0.83N	1.9 10¹⁸	2.6 10¹⁸	100±10 ^b)	75	100±10^b)	(0.22)^c)	(0.22)^c)
Al_0.28Ga_0.72N	2.9 10¹⁸	3.1 10¹⁸	100±10^b)	69	100±10^b)	(0.22)^c)	(0.22)^c)
Al_0.50Ga_0.50N	1 10¹⁸	- ^d)	160±10^b)	-^d)	160±10^b)	(0.22)^c)	(0.22)^c)

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last updated Friday, November 3, 2000 2:03:49 PM.