from differently Si-doped n-type 
-GaN films. Vertical lines indicate the E1(TO), and A1(LO) phonon frequencies of the GaN epilayer (dash-dotted), and the AlN buffer layer (dotted). Experimental data (symbols), and best-fit calculation (solid lines) of from differently Si-doped n-type -GaN films. Vertical lines indicate the E1(TO), and A1(LO) phonon frequencies of the GaN epilayer (dash-dotted), and the AlN buffer layer (dotted).
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