[1] W. Doolittle, T. Kropewnicki, C. Carter-Coman, S. Stock, P. Kohl, N. Jokerst, R. Metzger, S. Kang, K. Lee, G. May, A. Brown, J. Vac. Sci. Technol. B 16, 1300 (1998). [text citation]
[2] T. Detchprohm, H. Amano, K. Hiramatsu, I. Akasaki, J. Cryst. Growth 128, 384 (1993). [text citation]
[3] S Fischer, C Wetzel, WL Hansen, ED Bourret-Courchesne, BK Meyer, EE Haller, Appl. Phys. Lett. 69, 2716-2718 (1996). [text citation]
[4]"Hydride Vapor Epitaxial Growth of III-V Nitrides" R.J. Molnar, in Semiconductors and Semimetals, Vol. 57, Gallium Nitride II, ed. by J. I. Pankove and T. D. Moustakas, (Academic Press, 1998), [text citation]
[5] T. Gehrke, K.J. Linthicum, D.B. Thomson, P. Rajagopal, A.D. Batchelor, R.F. Davis, MRS Internet J. Nitride Semicond. Res. 4S1, G3.2 (1999). [text citation]
[6] Tsvetanka S. Zheleva, Scott A. Smith, Darren B. Thomson, Thomas Gehrke, Kevin J. Linthicum, Pradeep Rajagopal, Eric Carlson, Waeil M. Ashmawi, Robert F. Davis, MRS Internet J. Nitride Semicond. Res. 4S1, G3.38 (1999). [text citation]
[7] O. Parillaud, V. Wagner, H. J. Buehlmann, Marc ILEGEMS , MRS Internet J. Nitride Semicond. Res. 3, 40 (1998). [text citation]
[8] I. Grzegory, M. Bockowski, B. Lucznik, S. Krukowski, M. Wroblewski, S. Porowski, MRS Internet J. Nitride Semicond. Res. 1, 20 (1996). [text citation]
[9] M. Kelly, R. Vaudo, V. Phanse, L. Gorgens, O. Ambacher, M. Stutzman, Jpn. J. Appl. Phys. 38, L217 (1999). [text citation]
[10] D. Elwell, R. S. Feigelson, M. M. Simkins, W. A. Tiller, J. Cryst. Growth 66, 45 (1984). [text citation]
[11] C.T. Foxon, T.S. Cheng, D. Korakakis, S.V. Novikov, R.P. Campion, I. Grzegory, S. Porowski, M. Albrecht, H.P. Strunk, MRS Internet J. Nitride Semicond. Res. 4S1, G4.11 (1999). [text citation]
[12] M. Kamp, C. Kirchner, V. Schwegler, A. Pelzmann, E.J. Ebeling, M. Lesczczynski, I. Grzegory, T. Suski, S. Porowski, MRS Internet J. Nitride Semicond. Res. 4S1, G10.2 (1999). [text citation]
[13] G. Nowak, S. Krukowski, I. Grzegory, S. Porowski, J.M. Baranowski, K. Pakula, J. Zak, MRS Internet J. Nitride Semicond. Res. 1, 5 (1996). [text citation]
[14] F.A. Ponce, D.P. Bour, W.T. Young, M. Saunders, J.W. Steeds, Appl. Phys. Lett. 69, 337-339 (1996). [text citation]
[15] A. Smith, R. Calvert, J. Am. Chem. Soc. 36, 1363 (1914). [text citation]
[16]"Hydrogen Bromide and its Salts", D. John, in Bromine and its Compounds, ed. by Z. Jolles,( Academic Press, New York, 1966 ) [text citation]
[17] R. J. Molnar, R. Aggarwal, Z. L. Liau, E. R. Brown, I. Melngailis, W. Gütz, L. T. Romano, N. M. Johnson, Mater. Res. Soc. Symp. Proc. 395, 189-194 (1996). [text citation]
[18] A. Rebey, T. Boufaden, B. El Jani, J. Cryst. Growth 203, 12 (1999). [text citation]
[19] D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman, MRS Internet J. Nitride Semicond. Res. 4S1, G3.70 (1999). [text citation]
[20] T. L. Chu, K. Ito, R. K. Smeltzer, S. S. C. Chu, J. Electrochem.Soc. 121, 159 (1974). [text citation]
[21] AV Kuznetsov, EV Rakova, SS Lee, PJ Chong, J. Cryst. Growth 167, 458-467 (1996). [text citation]
© 1999 The Materials Research Society