Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
M. Callahan, M. Harris, M. Suscavage, D. Bliss
Air Force Research Laboratory, Sensors Directorate, Electromagnetic Materials/SNHX
J. Bailey
Solid State Scientific Corp.
This article was received on Tuesday, August 10, 1999 and
accepted on Thursday, September 16, 1999. Abstract
A
new process for synthesis and bulk crystal growth of GaN is described. GaN
single crystal c-plane platelets up to 9mm by 2mm by 100µm thick have been
grown by the Chemical Vapor Reaction Process (CVRP). The reaction between
gallium and a nitrogen precursor is produced by sublimation of solid ammonium
chloride in a carrier gas, which passes over gallium at a temperature of
approximately 900°C at near atmospheric pressures. Growth rates for the
platelets were 25-100 µm/hr in the hexagonal plane. Seeded growth in the
c-direction was also accomplished by re-growth on previously grown c-plane
platelets. The crystals were characterized by X-ray diffractometry, atomic
force microscopy, secondary ion mass spectrometry, inert gas fusion, and room
temperature Hall effect and resistivity measurements.
