MIJ-NSR Vol. 4, Art. 1, Y. Park et al.

Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System

Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Eunsoon Oh, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho, T.I. Kim
Samsung Advanced Institute of Technology

This article was received on Wednesday, January 6, 1999 and accepted on Tuesday, January 19, 1999.

Abstract

InGaN/GaN multi-quantum well (MQW) laser diodes (LDs) were grown on c-plane sapphire substrates using a multi-wafer MOCVD system. The threshold current for pulsed lasing was 1.6 A for a gain-guided laser diode with a stripe of 10 x 800 µm². The threshold current density was 20.3 kA cm^-2 and the threshold voltage was 16.5 V. The optical power ratio of transverse electric mode to transverse magnetic mode was found to be greater than 50. The characteristic temperature measured from the plot of threshold current versus measurement temperature was between 130 and 150K.

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 4, 1(1999).

last updated Tuesday, January 19, 1999 4:59:57 PM.