Volume 4

C. R. Abernathy, Co-Editor in Chief

B. Monemar, Co-Editor in Chief

Published 1999. A keyword index and an author index are also available.

Supplement 4S1

1. Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
Y. Park, B.j. Kim, J. W. Lee, O. H. Nam, C. Sone, H. Park, Eunsoon Oh, H. Shin, S. Chae, J. Cho, Ig-Hyeon Kim, J.S. Khim, S. Cho, T.I. Kim.
2. Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
H. Marchand, N. Zhang, L. Zhao, Y. Golan, S. J. Rosner, G. Girolami, Paul T. Fini , J.P. Ibbetson, S. Keller, Steven DenBaars , J. S. Speck, U. K. Mishra.
3. A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
John T Torvik , M. Leksono, J. I. Pankove, B. Van Zeghbroeck.
4. Novel approach to simulation of group-III nitrides growth by MOVPE
S. Yu. Karpov, V. G. Prokofyev, E. V. Yakovlev, R. A. Talalaev, Yu. N. Makarov.
5. Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
R. A. Talalaev, E. V. Yakovlev, S. Yu. Karpov, Yu. N. Makarov, O. Schoen, M. Heuken, G. Strauch, Holger Juergensen.
6. The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia
A. N. Alexeev, B. A. Borisov, V. P. Chaly, D. M. Demidov, A. L. Dudin, D. M. Krasovitsky, Yu. V. Pogorelsky, A. P. Shkurko, I. A. Sokolov, M. V. Stepanov, A. L. Ter-Martirosyan.
7. Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells
J. Dalfors, J. P. Bergman, P.O. Holtz, B. Monemar, H. Amano, I. Akasaki.
8. Growth and Device Performance of GaN Schottky Rectifiers
Jen-Inn Chyi , C. -M. Lee, C.C.Chuo, G. C. Chi, G. T. Dang, A. P. Zhang, Fan Ren , X.A. Cao, S.J. Pearton, S. N. G. Chu, R. G. Wilson.
9. Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
J.D. Brown, Zhonghai Yu, J. Matthews, S. Harney, J. Boney, J.F. Schetzina, J.D. Benson, K.W. Dang, C. Terrill, Thomas Nohava, Wei Yang, Subash Krishnankutty.
10. Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP)
M. Callahan, M. Harris, M. Suscavage, D. Bliss, J. Bailey.
11. Optical phonons and free-carrier effects in MOVPE grown Al_xGa_1-xN measured by Infrared Ellipsometry
M. Schubert, A. Kasic, T.E. Tiwald, J. Off, B. Kuhn, Ferdinand Scholz.
12. Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.
A. N. Cartwright, Paul M. Sweeney, Thomas Prunty, David P. Bour, Michael Kneissl.
13. New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A^IIIB^V on sapphire substrates
M.J. Kotelyanskii, I.M. Kotelyanskii, V.B. Kravchenko.
14. Strain relaxation in GaN layers grown on porous GaN sublayers
M. Mynbaeva, A. Titkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V. Yu. Davydov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A.Cherenkov, V.A. Dmitriev.
15. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride
B.J. Skromme.
16. Radiative recombination in In_0.15Ga_0.85N/GaN multiple quantum well structures
B. Monemar, J. P. Bergman, J. Dalfors, G. Pozina, B.E. Sernelius, P.O. Holtz, H. Amano, I. Akasaki.