Figures

Figure 1

Current vs. voltage (I-V) characteristic of an Al0.22Ga0.78N/Au Schottky photodiode. In the inset, 1 / C2 vs. voltage relation.

Figure 2

Zero-bias spectral response of AlxGa1-xN Schottky photodetectors at room temperature. In the inset, variation of photocurrent with irradiance in a GaN Schottky diode.

Figure 3

Photocurrent decays observed in Al0.22Ga0.78N/Au Schottky photodiodes with different sizes and bias. Red dotted lines correspond to exponential fits.

Figure 4

Photocurrent decay time constant vs. load resistance measured in Al0.22Ga0.78N/Au Schottky photodiodes with different sizes and bias voltage. Black dotted lines correspond to linear fits.

Figure 5

Variation of diode capacitance with reverse bias. Dotted line represents the sum of the diode internal capacitance and the load capacitance, CL. The decay time constant dependence on reverse bias (blue dots) is also shown.

© 1998 The Materials Research Society