Ultraviolet Photodetectors Based on Al_xGa_1-xN Schottky Barriers

1. Introduction

High responsivity Al_xGa_1-xN photoconductors have already been demonstrated [3] [4] [5]. However, the persistent photoconductivity (PPC) [5] [6] present in these devices results in a very slow non-exponential response which makes them unsuitable for most applications. GaN photovoltaic diodes have proven to be a better approach than photoconductive devices in applications requiring fast response or a high UV/visible contrast [2] [7]. Schottky barrier GaN photodetectors were first reported by Khan et al. [8], who demonstrated a Ti Schottky diode on p-type GaN. This devices showed a RC-limited time response of 1 µs (time for the signal to fall from maximum to 1/e), and a zero-bias responsivity of 130 mA/W illuminating through the sapphire. The inconvenience of backside illumination was analyzed by Binet et al. [9], who calculated a hole diffusion length of 0.1 µm which limited the device response. This problem was overcome by a semitransparent Schottky electrode, as used by Chen et al [10], who reported a 50 Å Pd Schottky barrier on n-type GaN, with a responsivity of 180 mA/W and a RC-limited time response of 118 ns on a 50 resistance. Al_0.26Ga_0.74N photodiodes based on 50 Å Pd Schottky barriers have been recently demonstrated [11], showing a responsivity of 70 mA/W with a minimum time response of 1.6 µs. In this work, we report on the fabrication and characterization of Schottky barrier photovoltaic detectors based on Si-doped Al_xGa_1-xN samples with different Al content (0 x 0.22), aiming to increase the time response.

2. Devices and experimental

For the fabrication of Schottky barriers, samples were diced into 4 x 4 mm squares and cleaned in acids. A semitransparent 100Å thick Au layer was deposited by Joule evaporation. The transmittance of this layer was found to be rather flat in the ultraviolet region, with a mean value of 30%. The pattern of the metallization was defined with standard photolithography. Detector diameters ranged from = 240 µm to = 1 mm. A second metallization was performed to deposit a gold pad, whose pattern was defined using a lift-off technique. Ohmic contacts were made with indium.

The photodiode current-voltage (I-V) characteristics were measured with a Hewlett Packard HP4155A semiconductor parameter analyzer. Capacitance vs. bias voltage were obtained using a Hewlett Packard HP4284A LCR-meter. Photodetector responsivity and its dependence on the incident optical power were determined with a non-focused cw He-Cd laser (325 nm). Spectral responsivity studies were performed by using a 150W xenon arc lamp and a Jobin-Yvon H-25 monochromator with a holographic grating that ensures good transmission down to 200 nm. The optical system was calibrated using a Molectron PR200 pyroelectric detector. Time response was measured using the fourth frequency of a Nd-YAG laser (266 nm), whose pulses were gaussian with a FWHM of 10 ns. Low frequency noise studies were performed with a PARC 113 low noise preamplifier and a FFT analyzer. The system has a background level of ~10^-21 A²/Hz.

3. Results and discussion

The room temperature spectral responsivity of the photodiodes is depicted in Figure 2. Photocurrent increases linearly with optical power from 10 mW/m² to 2 KW/m², as shown in the inset. Responsivity remains quite flat for photons with energy over the bandgap, with values of 70 mA/W, 45 mA/W and 29mA/W for Al_xGa_1-xN with x = 0, 0.15 and 0.22 respectively. These low values are due to the metal thickness (100 Å). A rejection of the visible radiation of more than three orders of magnitude is measured in all the devices, independent of diode size. The cutoff wavelength shifts with Al content from 362 nm (x = 0) to 320 nm (x = 0.22), which implies a linear variation of the energy bandgap as a function of aluminum concentration. This dependence has been checked by transmission measurements [12], and agrees with the data published by Wickenden et al. [13], although it is in contradiction with the downward bowing parameter recently reported by Brunner et al. [14].

Exponential photocurrent decays have been found when switching off the illumination, as shown in Figure 3 for Al_0.22Ga_0.78N diodes operating with a 2 K load resistance. Detectors are RC limited, where R is the sum of the load resistance, R_L, and the series resistance of the device, R_S, and C is the sum of the load capacitance, C_L, and the capacitance related to the diode space-charge-region, C_SCR.

The dependence of photocurrent decay time on the load resistance has been analyzed (see Figure 4) and confirms the RC behavior. By extrapolating the results in figure 3 to zero load resistance, a minimum time constant of 15 ns is estimated for 240 µm Al_0.22Ga_0.78N Schottky diodes. This value is shorter than the values previously reported for similar size AlGaN Schottky photodiodes [11]. The observed time response decreases with diode size due to the reduction of its internal capacitance. Time response is further reduced by reverse biasing, as diode capacitance decreases with the square root of the reverse bias voltage (see Figure 5).

The bandwidth of the devices, BW, can be estimated by:

(1)

For diodes with the same geometry and polarization, C_SCR and R_S are proportional to N_D^1/2 and (µN_D)^-1 respectively, where µ is the electron mobility and N_D is the doping level. Therefore, the bandwidth of these devices would be optimized by increasing µN_D^1/2. Under this assumption, Si-doping should improve the time response of Schottky photodiodes, provided that mobility does not decrease drastically and Schottky barrier is not much lowered by tunnel transport.

Low frequency noise is 1/f limited, satisfying the relationship:

(2)

where I_d is the dark current, and S₀ and are fitting parameters, with 1 1.2. A noise equivalent power (NEP) of 13 nW has been obtained in = 1mm Al_0.22Ga_0.78N diodes at -1.35 V bias, which implies a normalized detectivity as high as 3.5 x 10⁷ Hz^1/2W^-1m.

4. Conclusions

Acknowledgments

© 1998 The Materials Research Society