Figures

Figure 1

Current vs. voltage (I-V) characteristic of an Al_0.22Ga_0.78N/Au Schottky photodiode. In the inset, 1 / C² vs. voltage relation.

Figure 2

Zero-bias spectral response of Al_xGa_1-xN Schottky photodetectors at room temperature. In the inset, variation of photocurrent with irradiance in a GaN Schottky diode.

Figure 3

Photocurrent decays observed in Al_0.22Ga_0.78N/Au Schottky photodiodes with different sizes and bias. Red dotted lines correspond to exponential fits.

Figure 4

Photocurrent decay time constant vs. load resistance measured in Al_0.22Ga_0.78N/Au Schottky photodiodes with different sizes and bias voltage. Black dotted lines correspond to linear fits.

Figure 5

Variation of diode capacitance with reverse bias. Dotted line represents the sum of the diode internal capacitance and the load capacitance, C_L. The decay time constant dependence on reverse bias (blue dots) is also shown.

© 1998 The Materials Research Society