Ultraviolet Photodetectors Based on AlxGa1-xN Schottky Barriers


E. Monroy, F. Calle, E. Muñoz
Dpt. Ingeniería Electrónica, E.T.S.I. Telecomunicación, Politécnica, Ciudad Universitaria

F. Omnes, B. Beaumont, Pierre Gibart
Centre de Recherche sur l'Hétéroépitaxie et ses Applications, CRHEA-CNRS

J. A. Muñoz, F. Cusso
Dpto. Fisica de Materiales, Universidad Autonoma de Madrid

This article was received on Wednesday, June 17, 1998 and accepted on Friday, July 17, 1998.

Abstract

Schottky barrier photovoltaic detectors based on Si-doped AlxGa1-xN (0 <= x <= 0.22) have been fabricated and characterized. Samples were grown on basal plane sapphire by LP-MOVPE. Schottky contacts were made with Au. Responsivities are independent of the diode size and of the incident power in the range measured (10mW/m2 to 2KW/m2). The spectral response shows an abrupt cutoff that shifts linearly to higher energy with increasing Al content. A visible rejection of 3 to 4 orders of magnitude is observed in AlxGa1-xN Schottky photodiodes. Device time response is RC-limited, and a minimum decay time as short as 15ns have been estimated in unbiased Al0.22Ga0.28N diodes. This time response can be further reduced by reverse biasing.

Outline

  • Introduction
  • Devices and experimental
  • Results and discussion
  • Conclusions
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 9(1998).

    last updated Saturday, July 18, 1998 12:53:47 AM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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