Figure 4a

SEM photograph of GaN localized islands grown on the patterned Si_xN_y mask with [Mg]/[Ga] mole ratios of 0 (undoped GaN pyramids). Except for the Mg introduction, the growth conditions (temperature 1080°C, TMGa 16 µMole) and time (30') were identical for both samples.

Figure 4b

SEM photograph of GaN localized islands grown on the patterned Si_xN_y mask with [Mg]/[Ga] mole ratios of 0.08.

Figure 4c

SEM photograph of GaN localized islands grown on the patterned Si_xN_y mask with [Mg]/[Ga] mole ratios of 0.11.

Figure 4d

SEM photograph of GaN localized islands grown on the patterned Si_xN_y mask with [Mg]/[Ga] mole ratios of 0.14. The V_R/V_C is about 4.

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