Figure 3

Cross section perpendicular to the (11-20) direction of a localized GaN truncated hexagonal pyramid shown in figure 1(c). W_T and W_B were respectively the width of the top facet and bottom base; H was the height of the pyramid. W_T, W_B and H were function of the growth duration t. _R was the angle between (0001) and ((101) delimiting planes. W_B0 was the width of the aperture in the Si_xN_y mask.

(click for full image)

top        text     Figure 2     Figure 4        tables        endnotes

© 1998-2003 The Materials Research Society