Figure 1a

SEM photograph of GaN localized islands on the patterned Si_xN_y mask with growth times of 5min. The growth temperature was 1080°C with 16µMole/min TMGa flow.

Figure 1b

SEM photograph of GaN localized islands on the patterned Si_xN_y mask with growth times of 10min.

Figure 1c

SEM photograph of GaN localized islands on the patterned Si_xN_y mask with growth times of 20min. At this stage, the GaN pyramids are delimited by six facets {101} and a top C(0001) facet.

Figure 1d

SEM photograph of GaN localized islands on the patterned Si_xN_y mask with growth times of 30min. After a such growth time, the top C(0001) facet is vanished.

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