Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 µm diameter circles separated by 5µm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {101} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {100} facets and (0001) top facet were obtained for a high SiH₄ flow rate in the vapor phase. We found that the GaN growth rates V_R and V_C, measured in the R <101> and C <0001> directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the V_R/V_C ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20µm-high Si-doped GaN columns were obtained.

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