This article was received on Monday, January 26, 1998 and
accepted on Tuesday, April 7, 1998.
Abstract
Results
from MOCVD grown n-Al0.1Ga0.9N/i-GaN/p-GaN UV
photodetectors on sapphire substrates are presented. The devices show peak
responsivities near 0.2A/W for wavelengths between 352nm and 362nm, and
responsivities of less than 10-3A/W for wavelengths longer than
375nm and shorter than 342nm. The data is explained in terms of a simple
device model.
