Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence


Zhonghai Yu, M.A.L. Johnson, T. Mcnulty, J.D. Brown, J.W. Cook,Jr, J.F. Schetzina
Department of Physics, North Carolina State University

This article was received on Monday, February 23, 1998 and accepted on Tuesday, March 24, 1998.

Abstract

Growth of GaN by MOVPE on mismatched substrates such as sapphire or SiC produces a columnar material consisting of many hexagonal grains ~1 µm across. In contrast, the epitaxial-lateral-overgrowth (ELO) process creates a new material -- single-crystal GaN. We have studied the ELO process using GaN/sapphire layers patterned with SiO2 stripes. SEM images show that the (0001) GaN surface remains very flat as the ELO progresses. Cathodoluminescence images at 590 nm reveal spotty yellow-green emission from the columnar GaN as it emerges from the window areas. Very bright 590 nm emission occurs as the ELO process begins. We associate this deep-level cathodoluminescence with the strain field that accompanies the conversion of columnar GaN into single-crystal GaN via the ELO process. As the ELO process continues across the SiO2 stripes, the 590 nm emission disappears and is replaced with pure band edge cathodoluminescence at 365 nm which is maintained until coalescence of adjacent ELO layers occurs near the centers of the SiO2 stripes.

Outline

  • Introduction
  • Experimental Details
  • Results and Discussion
  • Summary
  • Acknowledgments

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    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 6(1998).

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    © 1998-2001 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research