Phase Separation in wurtzite In1-x-yGaxAlyN


T. Matsuoka
Nippon Telegraph and Telephone Corp. (NTT)

This article was received on Monday, June 22, 1998 and accepted on Friday, December 4, 1998.

Abstract

The wurtzite structure In1-x-yGaxAlyN quaternary system is studied with respect to the unstable region in mixing. The composition in the unstable region is calculated from the free energy of mixing by using the strictly regular solution model. The interaction parameter used in this calculation is obtained by using the delta-lattice-parameter method. Here, the proportionality constant connecting the lattice constants and the band-gap energy is determined by fitting the calculation to the composition data obtained experimentally from InGaN grown by metallorganic vapor phase epitaxy. From this calculation, the ternary alloys of InAlN, InGaN and GaAlN are predicted to always, sometimes, and hardly ever, respectively, have an unstable mixing region. The essential mismatch in thermal equilibrium between the strictly regular solution approximation and the growth conditions in MOVPE is removed by using a fitting calculation and experimental data. Also, the mismatch between the zinc-blende structure and the wurtzite structure is corrected. As a result, this prediction of the phase separation in In1-x-yGaxAlyN becomes more reliable.

Outline

  • Introduction
  • Calculation Method and InGaN Growth
  • Results and Discussion
  • Conclusion
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 54(1998).

    last updated Friday, December 4, 1998 10:37:33 PM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
    ISBN links