[1] S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, T. Mukai, Jpn. J. Appl. Phys. 34, L1332-L1335 (1995). [text citation]
[2] F. A. Ponce, D. P. Bour, Nature 386, 351-359 (1997). [text citation]
[3] Marek Osinski, Daniel L. Barton, J. Kor. Phys. Soc. 30, S13-S20 (1997). [text citation]
[4] T Egawa, H Ishikawa, T Jimbo, M Umeno, Appl. Phys. Lett. 69, 830-832 (1996). [text citation]
[5] M Osinski, J Zeller, PC Chiu, BS Phillips, DL Barton, Appl. Phys. Lett. 69, 898-900 (1996). [text citation]
[6] K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Shuji Nakamura , MRS Internet J. Nitride Semicond. Res. 1, 11 (1996). [text citation]
[7] K. G. Zolina, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, Semiconductors 31, 901 (1997). [text citation]
[8] A. E. Yunovich, A. N. Kovalev, V. E. Kudryashov, F. I. Manyachin, A. N. Turkin, K. G. Zolina, Mater. Res. Soc. Symp. Proc. 449, 1167 (1997). [text citation]
[9] V. E. Kudryashov, K. G. Zolina, A. N. Turkin, A. E. Yunovich, A. N. Kovalev, F. I. Manyakhin, Semiconductors 31, 1123 (1997). [text citation]
[10] F. Manyakhin, A. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, MRS Internet J. Nitride Semicond. Res. 2, 11 (1997). [text citation]
[11]A.N.Kovalev, V.E.Kudryashov, F.I.Manyakhin, A.N.Turkin, A.E.Yunovich. "Changes of Luminescent and Electrical Properties of InGaN/AlGaN/GaN Light-Emitting Diodes During a long Work at Forward Currents". Proc. of the 2nd Int. Conf. on Nitride Semiconductors, Tokushima, Oct. 1997, paper P1-6, pp.46-47 [text citation]
[12] A. N. Kovalev, V. E. Kudryashov, F. I. Manyakhin, A. N. Turkin, A. E. Yunovich, Mater. Res. Soc. Symp. Proc. 482, 1041 (1998). [text citation]
[13] F. I. Manyakhin, A. N. Kovalev, V. E. Kudryashov, A. N. Turkin, A. E. Yunovich, unpublished (1998) . [text citation]
[14]F.I.Manyachin "Mechanisms of degradation of light-emitting diodes based on III-V heterojunctions", Izvestiya VUZov, ser. Materialy Electrn. Techn. 11, 63, (1998) in Russian [text citation]
[15] CB Vartuli, SJ Pearton, ES Lambers, CR Abernathy, JD MacKenzie, JC Zolper, J. Vac. Sci. Technol. B 14, 3523 (1996). [text citation]
[16]C.G.Van De Walle, C.Stampfl, J.Neugebauer, "Theory of Doping and Defects in III-V Materials", in Proceedings of the 2nd Intern. Conference on Nitride Semiconductors, Oct.1997, Tokushima, Jap., W1-1, pp.386-388 [text citation]
[17]V.S.Vavilov, A.E.Kiv, O.R.Niyazova, "Mechanisms of defects formation and migration in semiconductors", (Moscow, Nauka Publishers, 1981) 368 pages (in Russian) [text citation]
[18]V.S.Vavilov, "Atomic migration and defect concentration and structure changes due to electronic subsystem excitations in semiconductors", Uspekhi Fiz. Nauk, 1997, 167 (4), 407 (in Russian) [text citation]
© 1998 The Materials Research Society