F. Demangeot, J. Frandon, M. A. Renucci
Laboratoire de Physique des Solides (ESA 5477 CNRS), Université Paul Sabatier
H. Sands, D. Batchelder
Department of Physics and Astronomy, University of Leeds, United Kingdom
S. Ruffenach-Clur, Olivier Briot, Bernard Gil
Groupe d'Etude des Semiconducteurs, GES-CNRS
x
0.86) grown on sapphire substrates by metal-organic vapor phase epitaxy have
been recorded at room temperature, under an excitation at 244 nm. Using the
photoluminescence spectra, the variation of the band gap of these alloys can be
followed only up to x = 0.5. From resonant Raman scattering, it can be deduced
that the band gap energy of the solid solution for x very close to 0.7
corresponds to the incident photon energy (5.08 eV). This result is confirmed
by a detailed comparison of the present work with previous experimental data on
the A1(LO) phonon peak position, obtained under visible
excitation.© 1998 The Materials Research Society