Figures

Figure 1

Room temperature cathodoluminescence spectra of cubic and wurtzite GaN epilayers grown by the MBE method.

Figure 2

Low temperature PL spectrum of a cubic GaN epilayer grown by the ECR-MBE method on a (001) Si substrate covered with a SiC buffer layer.

Figure 3

Time-resolved PL spectrum taken at 2 K under 2 ps pulsed excitation. The spectra were taken at the maximum of PL intensity and after 200 ps and 400 ps of the PL decay.

Figure 4

AFM image of the surface morphology of cubic GaN epilayer grown by GS-MBE

Figure 5

AFM image of the surface morphology of a cubic GaN epilayer grown by ECR-MBE.

Figure 6

Room temperature SEM image at 9000 magnification of the cubic GaN epilayers

Figure 7

Room temperature monochromatic CL image at 9000 magnification of the cubic GaN epilayers taken with the detection set at maximum of the edge emission.

Figure 8

Room temperature monochromatic CL image at 9000 magnification of the cubic GaN epilayers taken with the detection set at maximum of the red emission.

© 1998 The Materials Research Society