MIJ-NSR Vol. 3, Art. 51, M. Godlewski et al.

Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si

This article was received on Tuesday, June 23, 1998 and accepted on Tuesday, November 24, 1998.

Abstract

Optical properties of GaN epilayers of a cubic phase are studied. We show a strong influence of the sample morphology on intensity of the edge emission. Whereas edge luminescence is reduced at the grain boundaries, red emission is spatially homogeneous.

Outline

Introduction

Samples

Experimental

Results and Discussion

Conclusions

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 51(1998).

last updated Wednesday, November 25, 1998 12:30:00 PM.