Photoluminescence and CCL-SEM characterization of GaN crystals grown by SST: (a) typical room-temperature emission spectrum of GaN grown on SiC(0001) Si-faced surface, (b) CL image of GaN surface far from defect area, (c) CL image of GaN surface near the defect area, (d) CL image of surface of GaN grown under non-optimal conditions.
© 1998 The Materials Research Society
