New plasma chemistries for etching GaN and InN: BI3 and BBr3
Hyun Cho, J. Hong
Department of Materials Science and Engineering, University of Florida
T. Maeda
Fujitsu Laboratories Ltd.
S.M. Donovan, J. Devin MacKenzie , Cammy R. Abernathy , S.J. Pearton
Department of Materials Science and Engineering, University of Florida
R. J. Shul, J. Han
Sandia National Laboratories/New Mexico
This article was received on January 21, 1998 and
accepted on March 4, 1998. Abstract
Smooth, anisotropic etching of InN and GaN is obtained in BI3- or
BBr3-based Inductively Coupled Plasmas. Etch selectivities of 100:1
were achieved for InN over both GaN and AlN in the BI3 mixtures,
while for BBr3 discharges values of 100:1 for InN over AlN and 25:1
for InN over GaN were measured. The etched surface morphologies of InN and GaN
with both mixtures are similar or better than those of control
samples.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 5(1998).
last updated March 4, 1998 11:38:22 AM.© 1998 The Materials Research Society
