Figures

Figure 1

SEM micrographs of GaAs films prepared using both conventional MOCVD (a) and capillary epitaxy MOCVD(b) at the initial stage of epitaxy on YSZ substrates (60 and 600s after procedure beginning, 20000x) and optical micrographs of NH4J flat crystals prepared by the graphoepitaxy technique on amorphous Al substrates without (c) and with(d) a surface active substance (100x).

Figure 2

Luminescence spectra of undoped GaN films on a YSZ substrate.

© 1998 The Materials Research Society