Tables for MIJ-NSR Volume 3, Article 49

Tables

Some characteristics of YSZ and A^IIIB^V crystals.

Crystal	Lattice		T_m,°C (melting point)	Therm. Exp. Coeff. 10^-6 deg^-1	E_g, eV
	Type	a, Å
YSZ (ZrO₂)_100-x · (Y₂O₃)_x	Cubic (fluorite)	5,141(x=10) 5,157(x=15) 5,198(x=21)	2800	11,4 (15-1000°C)
GaAs	Cub(sf)	5,65	1283	5,4	1,43
GaP	Cub(sf)	5, 445	1467	4,7	2,26
GaN	H(v)	a=3,186 c=5,178	1700	5,6 7,8	3,4

Impurity concentration in YSZ single crystals, YSZ-wafers and GaAs/YSZ films

Element	YSZ crystal, wt%	YSZ wafer, wt%	GaAs/YSZ, at. cm^-3
Al	0.0004	0.001	5x10¹⁷
Ca	0.001	0.003	5x10¹⁷
Mg	0.0005	0.0005
Na	0.0001	0.003	2x10¹⁷
K	0.0005	0.001	5x10¹⁶
Si	0.001	0,015	1x10¹⁷
Cu	0.0005	0.0005
Fe	0.0004	0.0004	5x10¹⁶
Mn	0.0001	0.001

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last updated Thursday, December 10, 1998 12:42:51 PM.