[1] L. M. Mercardalli, D. Diemegand, M. Crose, Y. Siejka, Proc. SPIE 623, 183 (1986). [text citation]
[2] H. M. Manasevit, I. Goleski, L. A. Mondy, J. Electrochem. Soc. 130, 1752 (1983). [text citation]
[3]A.N.Buzynin, Yu.N.Buzynin, V.V. Osiko, et.al., "Epitaxial growthof GaAs on YSZ substrutes", Abstr. 11-th Intern. Conf. Of Cryst. Growth. (The Hague, The Netherlands, 1995) 333 [text citation]
[4]A.N.Busynin, Yu.N.Buzynin, V.V.Osiko, Sov. Union Patent N1730872 (1992) [text citation]
[5]V.I. Aleksandrov, V.V.Osiko, A.M.Prokhorov and V.M.Tatarintsev, "Synthesis and crystal growth of refractory materials by RF melting in a cold container", in Current Topics in Materials Science, edited by E. Kaldis (North-Holland, Amsterdam, 1978), p.421 [text citation]
[6]V.Shengurov, V.N.Shabunov, A.N.Buzynin, et al., "Silicon heterostructures on fianite substrates:, Microelectronics 6, 204 (1996) [text citation]
[7]Soviet Union Patent N 1590027 (1991) [text citation]
[8]N.N.Sheftal and A.N.Buzynin, "The epitaxy orientation of crystallites on amorphous substrute and effect of the stratches", Vestnik Moscow Univ. 3, 102 (1972); Nat. Trans. Cent. The Yohn Crenan Library, 35w, 33rd St., Chicago IL 60616 USA [text citation]
[9] S. D. Hersee, J. C. Ramer, K. J. Malloy, MRS Bull. 22, 45 (1997). [text citation]
© 1998 The Materials Research Society