Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique
A. N. Buzynin, V. V. Osiko
General Physics Institute of RAS
Yu. N. Buzynin
Institute for Physics of Microstructure of RAS
B. Pushnyi
Ioffe Physical-Technical Institute
This article was received on Monday, June 22, 1998 and
accepted on Wednesday, November 4, 1998. Abstract
Heteroepitaxial GaN and GaAs films were grown by both conventional
two-step MOCVD and the new "capillary epitaxy" technique on (001)
and (111) fianite (YSZ) substrates. The capillary epitaxy technique was
investigated for the example of GaAs films growth on a YSZ substrate. This
technique allows both the reduction of the minimum thickness and the
improvement of the quality of III-V films. PL spectra of undoped GaN films on
YSZ were studied.
