Native defects and carbon impurity in cubic BN


I. Gorczyca
High Pressure Research Center

A. Svane, N. E. Christensen
Institute of Physics and Astronomy, University of Aarhus

This article was received on Friday, August 7, 1998 and accepted on Monday, November 2, 1998.

Abstract

Using the Green's function technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we study the electronic structure of native defects and substitutional carbon impurities in cubic BN. To include the lattice relaxation effects a supercell approach in connection with the full-potential linear muffin-tin-orbital method is applied.

Outline

  • Introduction
  • Calculations: Defect levels and relaxation effects
  • Vacancies
  • Antisites
  • Carbon impurity
  • Summary
  • Acknowledgments
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 48(1998).

    last updated Tuesday, November 3, 1998 3:51:03 PM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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