GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen


Jolanta Prywer
Institute of Physics, Technical University of Lódz

S. Krukowski
High Pressure Research Center

This article was received on Friday, July 17, 1998 and accepted on Wednesday, October 28, 1998.

Abstract

In the growth of GaN from nitrogen dissolved in Ga under high N2 pressure, two main habits are observed: plate-like and needle-like. The plate-like crystals can be divided into those having (0001), (000(-1)) and {10(-1)0} faces and those with the additional {10(-1)1} and {10(-1)2} faces. The needle-like crystals belong to three classes: with or without (0001) faces and a third with unusual, star-like needles. The plate-like and needle-like habits and transformation between these habits are discussed in greater detail. It is shown that it is possible to evaluate the relative growth rates corresponding to such transitions.

Outline

  • Introduction
  • Method of Crystal Growth
  • The Observed GaN Single Crystal Habits
  • Theoretical Analysis of the Observed GaN Single Crystal Habits
  • Method of analysis
  • Transformation from plate-like into needle-like GaN single crystal habits
  • Conclusions

    • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 47(1998).

    last updated Thursday, October 29, 1998 3:22:34 PM.

    © 1998 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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