Figures

Figure 1

Reciprocal lattice map of the GaN/GaAlN MQW sample grown on GaN substrate. The GaAlN buffer and cap layers and the zero-order peak of the superlattice corresponding to the MQW section have the same in-plane lattice parameter as GaN. Measurement was performed in reciprocal lattice units of sapphire.

(click for full image)

Figure 2

Reciprocal lattice scan of GaAlN/GaN MQW along growth axis. Satellites of the superlattice corresponding to the MQW section allow to calculate thickness of each layer. Measurement was performed in reciprocal lattice units of sapphire.

(click for full image)

Figure 3

Low temperature photoluminescence spectra of multi-quantum well.

(click for full image)

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© 1998 The Materials Research Society