Figures

Figure 1

The ESR spectra of Mg-acceptor in GaN crystal after two thermal annealing procedures: RTA (solid line), and annealing in NH3 atmosphere (dotted line). Microwave power P = 2 mW, modulation amplitude A = 0.2 mT. The narrow resonance line at higher magnetic field is due to the quartz sample holder.

Figure 2

The ESR resonance line for g = 2.0026 in AMONO GaN crystals, observed after thermal annealing. Microwave power P = 2 mW, modulation amplitude A = 0.03 mT.

© 1998 The Materials Research Society