MIJ-NSR Vol. 3, Art. 45, M. Palczewska et al.

Paramagnetic defects in GaN

This article was received on Monday, June 22, 1998 and accepted on Friday, October 23, 1998.

Abstract

In this work, paramagnetic defects in wurtzite GaN crystals were systematically studied using the Electron Spin Resonance (ESR) technique and using electrical measurements. Three different resonance signals were found. The first had g_|| = 1.9514 ± 0.0005 and g = 1.9486 ± 0.0005, a commonly observed defect in n-type crystals ascribed to the shallow donor of GaN [1]. The second ESR signal, an anisotropic line of g_|| = 2.0728 ± 0.0015 and g = 1.9886 ± 0.0015, was observed only in Mg-doped p-type GaN layers, and was assigned to the Mg acceptor. The last ESR resonance signal, an isotropic line with g = 2.0026 ± 0.0005 was observed only in AMMONO GaN crystals after thermal annealing, as well as in Mg-doped GaN epitaxial layers. It was tentatively identified as due to a deep acceptor.

Outline

Introduction

Experiment

Results and discussion

Acknowledgments

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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 45(1998).

last updated Saturday, October 24, 1998 11:37:35 PM.