Discussion of Article 44 in Volume 3

This is a discussion of the MIJ-NSR article entitled The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells by A. E. Yunovich, V. E. Kudryashov, A. N. Turkin, A. Kovalev, F. Manyakhin

Description of the paper by the reviewer(s):

Reviewer 1: The authors of this paper propose a model to explain the behavioural properties of GaN/GaInN light emitting diode structures containing multiple quantum wells over six decades of current. The results are compared to similar devices containing single quantum wells. A spectral shift of the electroluminescence with applied voltage is observed. Piezoelectric effects are not taken into acount. Should they be?

This discussion is moderated by A. E. Yunovich.

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