Figures

Figure 1

X-ray measurement of epitaxial GaN layers on double-crystal (DCD)- and triple-crystal (TCD)- diffractometer

Figure 2

Distribution of intensity around (1124) reflection in asymmetric Bragg geometry for 0<h and 0>h, k0 and kh - vectors of incident and diffracted X-ray waves, - double-crystal FWHM for - scanning mode.

Figure 3

Distribution of intensity around (1124) reflection in asymmetric Bragg geometry for 0<h and 0>h, k0 and kh - vectors of incident and diffracted X-ray waves, - double-crystal FWHM for - scanning mode.

Figure 4

Dependence of c/a on biaxial stress a. + - experiment, solid line - calculated. Calculations were performed based on equation from ref. [5]. For pure biaxial strain c/a=-2/(1-). For combination of biaxial and hydrostatic strain a=(1-bC)(1+(1-)/E)-1, c=(1-bC)(1-2/E)-1, where - Poisson ratio, E - Young modulus, C- impurity concentration, b - contraction coefficient.

Figure 5

The density of vertical edge (1), screw (2) dislocations and misfit dislocations (3) parallel to the interface in relation to Si doping

Figure 6

The density of vertical edge (1), screw (2) dislocations and misfit dislocations (3) parallel to the interface in relation to Si doping

Figure 7

Variation of the domain size of columnar structure with Si doping

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