Macro- and microstrains in MOCVD-grown GaN
A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov
Ioffe Physical-Technical Institute
This article was received on Monday, June 22, 1998 and
accepted on Wednesday, October 21, 1998. Abstract
Undoped
and Si-doped GaN films were grown by low pressure MOCVD on (0001) sapphire
substrates. The angular distribution of the X-ray diffraction corresponding to
the (0002), (0004), (10