Macro- and microstrains in MOCVD-grown GaN


A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov
Ioffe Physical-Technical Institute

This article was received on Monday, June 22, 1998 and accepted on Wednesday, October 21, 1998.

Abstract

Undoped and Si-doped GaN films were grown by low pressure MOCVD on (0001) sapphire substrates. The angular distribution of the X-ray diffraction corresponding to the (0002), (0004), (10(-1)0), (20(-2)0), and (11(-2)4) reflections has been measured by means of double- and triple -crystal diffractometry with Mo Kalpha1 and Cu Kalpha1 radiation under conditions of symmetrical and asymmetrical Bragg- and Laue-geometry. In our experiments a non-coplanar geometry was also applied. On the basis of the performed studies, five independent components of the tensor of microdistortion were evaluated and the average grain-size in two directions was determined. The type, position, and density of dislocations were established as well. The role of dislocations in strain relaxation and their influence on the optical and electrical properties are discussed.

Outline

  • Introduction
  • Experiment
  • Results
  • Conclusion
  • Linked Pages

    Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 42(1998).

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    © 1998-2000 The Materials Research Society MRS Internet Journal of Nitride Semiconductor Research
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