Figures

Figure 1

Schematic of GaN/AlGaN HBT

Figure 2

HBT emitter-base junction forward I-V characteristics at 25°C (top) and 300°C (bottom).

Figure 3

Ni/Pt/Au base contact I-V characteristics at 25°C (top) and 300°C (bottom).

Figure 4

HBT base-collector junction forward I-V characteristics at 25°C (top) and 300°C (bottom).

Figure 5

Gummel plot for a 90µm diameter GaN/AlGaN HBT at 300°C.

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