300°C GaN/AlGaN Heterojunction Bipolar Transistor
Fan Ren
Department of Chemical Engineering, University of Florida
Cammy R. Abernathy
Department of Materials Science and Engineering, University of Florida
J. M. Van Hove, P. P. Chow, R. Hickman, JJ Klaasen
Blue Lotus Micro Devices, an SVT Associates company
R. F. Kopf
Bell Laboratories, Lucent Technologies
Hyun Cho, K. B. Jung
Department of Materials Science and Engineering, University of Florida
J. R. La Roche
Department of Chemical Engineering, University of Florida
R. G. Wilson
Charles Evans and Associates
J. Han, R. J. Shul, A. G. Baca
Sandia National Laboratories/New Mexico
S.J. Pearton
Department of Materials Science and Engineering, University of Florida
This article was received on Tuesday, September 8, 1998 and
accepted on Wednesday, October 21, 1998. Abstract
A GaN/AlGaN heterojunction bipolar transistor has been fabricated
using Cl2/Ar dry etching for mesa formation. As the hole
concentration increases due to more efficient ionization of the Mg acceptors at
elevated temperatures (> 250°C), the device shows improved gain.
Future efforts should focus on methods for reducing base resistance, which are
briefly summarized.Outline
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Cite this article as: MRS Internet J. Nitride Semicond. Res. 3, 41(1998).
last updated Thursday, February 22, 2001 1:16:38 PM.© 1998-2001 The Materials Research Society
