Figures

Figure 1

Schematic Diagram of the HVPE reactor.

Figure 2a

Mask with star shaped pattern, with stripes opened at 5° angular increment to determine optimal stripe orientation and differences in lateral growth rates.

Figure 2b

Areas of parallel stripes. (top: SEM top view of mask, bottom: stripe/mask widths)

Figure 3

Photoluminescence spectrum of GaN/Al2O3.

Figure 4a

Top view of GaN/Al2O3 (optical microscope).

Figure 4b

Top view of a growth pyramid (optical microscope).

Figure 5

Growth on star shaped pattern (SEM, top view). Differences in lateral growth rates can clearly be seen.

Figure 6

Growth on star shape pattern (SEM, tilted view), change of stripe cross-sections from triangular in <110> direction to trapezoidal in <100> direction shape reflects differences of lateral growth rates.

Figure 7a

Growth on parallel stripes 10 µm/10 µm in <100> direction before coalescence

Figure 7b

Growth on parallel stripes 5 µm/5 µm in <100> direction, coalescence of GaN

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